Publications

Journals:

(3) Nadim Chowdhury, et. al. “A Physically Based Analytical Model to Predict Quantized Eigen Energies and Wave Functions Incorporating Penetration Effect”, ECS Transaction 58(16), pp. 9-15. 2014.

(2) Nadim Chowdhury, et. al. “Negative Capacitance Tunnel Field Effect Transistor: A Novel Device With Low Subthreshold Swing and High On Current”, ECS Transaction 58(16), pp. 1-8. 2014.

(1) Takian Fakhrul, Rubayyat Mahabub, Nadim Chowdhury, Quazi D. M. Khosru and Ahmed Sharif, “Structural, dielectric and magnetic properties of Ta-substituted Bi_0.8La_0.2FeO₃ multiferroics”, Journal of Alloys and Compounds vol. 622, pp 471-476, 2014.

 ♦  Nadim Chowdhury, Imtiaz Ahmed, Takian Fakhrul, Md. Kawsar Alam and Quazi D. M. Khosru “A Low Subthreshold Swing Tunneling Field Effect Transistor for Next Generation Low Power CMOS Applications " (Under review Physica E)

Conference Proceedings:

(5) Nadim Chowdhury, et. al. “A Physically Based Analytical Modeling of Threshold Voltage Control for Fully-Depleted SOI Double Gate NMOS-PMOS Flexible-FET”, IEEE International Conference on Electro/Information Technology, Indianapolis, USA,. pp. 1-4, May 2012

(4) Nadim Chowdhury, et. al. “Novel SPINFET: By simultaneous utilization of Rashba Effect, Zeeman Effect and Negative Capacitance.”, International Semiconductor Device Symposium (ISDRS), Maryland, USA, December 2013.

  (3) Iftikhar Ahmad Niaz, Md. Hasibul Alam, Imtiaz Ahmed, Zubair Al Azim, Nadim Chowdhury and   Quazi D.M. Khosru,  “Physical/Process Parameter Dependence Of Gate Capacitance And Ballistic Performance Of InAs_ySb_1-y Quantum Well Field Effect Transistors”,IEEE International Conference on Nanoelectronics (INEC), in Singapore, pp. 389-392, January 2013.

(2) Md. Hasibul Alam, Iftikhar Ahmad Niaz, Imtiaz Ahmed, Zubair Al Azim, Nadim Chowdhury and Quazi D.M. Khosru, “In_xGa_1-xSb MOSFET Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current", IEEE International Conference on Electro/Information Technology, Indianapolis, USA, pp. 1-6, November 2012.

(1) Imtiaz Ahmed, Iftikhar Ahmad Niaz, Md. Hasibul Alam,  Zubair Al Azim, Nadim Chowdhury and Quazi D.M. Khosru “Self-Consistent C-V Characterization of  Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects” IEEE International Conference on Electronic Devices, Systems and Applications, in Malaysia, pp. 75-79, November 2012.